Park, Byung-Eun et al. (Editors): Ferroelectric-Gate Field Effect Transistor Memories. Device Physics and Applications. Dordrecht, Springer, 2016. XVIII, 347 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped.

• Category: Physik
• Language: English (en)
• ISBN: 9789402408393
• Order Number: 5493IB

Our Price: EUR 22,--