Park, Byung-Eun/Ishiwara, Hiroshi/Okuyama, Masanori/Sakai, Shigeki/Yoon, Sung-Min (Hrsg.): Ferroelectric-Gate Field Effect Transistor Memories. Device Physics and Applications. 2nd ed. 2020. Singapore, Springer Singapore, 2021. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics).

• Category: Varia
• Language: English (eng)
• ISBN: 9789811512148
• Order Number: 676VB

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